MRFE6VP6300HR3 Enlarge Photo N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and aerospace applications
NXP Semiconductors
от 3 недель
MRFE6VP6300HR3 Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R
FREESCALE
1283 20-30 дней
MRFE6VP6300HR3_11 RF Power Field Effect Transistors