MRF8S9200NR3 Enlarge Photo RF Power Field Effect Transistor. N-Channel Enhancement-Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modul
NXP Semiconductors
от 2-3 недели
MRF8S9200NR3-BLK Trans MOSFET N-CH 70V 3-Pin OM-780 EP T/R
NXP - Freescale
1455 20-30 дней
MRF8S9200NR3_10 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET