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По вашему запросу "APT150GN60J" найдены следующие совпадения:
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| Партномер | Производитель | Изобр. | Datasheet | Склад |
|---|---|---|---|---|
| APT150GN60JDQ4 Модули биполярных транзисторов с изолированным затвором (IGBT) Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi | Microsemi Power Products Group |  |  | 1746 20-30 дней |
| APT150GN60J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribut | Microsemi |  | | от 2-3 недели |
| APT150GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribut | Microsemi |  | | 3256 20-30 дней |
| APT150GN60J IGBT 600V 220A 536W SOT227 | Microsemi Corporation |  | | 3769 20-30 дней |
| APT150GN60JDQ4 IGBT 600V 220A 536W SOT227 | Microsemi Corporation | | | 2609 20-30 дней |
